Enhanced stripping of implanted resists
US8772170B2 · kind B2 · utility
1Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2010 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Dec 25, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/428
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A benign all-wet process for stripping photoresist after an implantation process performed to fabricate a device is provided. A method of stripping implanted resist includes a first step of disrupting a crust formed on the surface of the resist during the implantation process and then removing the underlying resist. In accordance with embodiments of the invention, a catalyzed hydrogen peroxide (CHP) chemical system is used to disrupt the crust and allow for low temperature (<180° C.) removal of the underlying resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.