Nonvolatile semiconductor storage device
US8772753B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 28, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Sep 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A nonvolatile semiconductor storage device includes a word line, a first electrode, a high resistance ion diffusion layer, a second electrode, and a bit line. The word line is made of a conductive material extending in a first direction. The first electrode is provided on the word line. The high resistance ion diffusion layer is provided on the first electrode. The second electrode is provided on the ion diffusion layer and configured to supply a metal into the ion diffusion layer upon application of a positive voltage relative to the first electrode. The bit line is provided on the second electrode and made of a conductive material extending in a second direction orthogonal to the first direction. The ion diffusion layer contains oxygen at a higher concentration on the word line side than on the bit line side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.