Method for manufacturing semiconductor device
US8772771B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 25, 2013 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Apr 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
Miniaturized transistors having high and stable electric characteristics using high precision microfabrication are provided with high yield. Further, high performance, high reliability, and high productivity also of a semiconductor device including the transistor are achieved. A semiconductor device includes a vertical transistor in which a first electrode layer, a first oxide film containing indium, gallium, zinc, and nitrogen as main components, an oxide semiconductor film containing indium, gallium, and zinc as main components, a second oxide film containing indium, gallium, zinc, and nitrogen as main components, and a second electrode layer are stacked in this order, and a first gate insulating film and a first gate electrode layer are provided at one side of the columnar oxide semiconductor film and a second gate insulating film and a second gate electrode layer are provided at the other side of the columnar oxide semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.