Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device
US8772785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2009 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Sep 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A semiconductor device includes semiconductor layers, an anode electrode, and a cathode electrode. The semiconductor layers include a composition change layer, the anode electrode is electrically connected to one of principal surfaces of the composition change layer through a formation of a Schottky junction between the anode electrode and a part of the semiconductor layers, the cathode electrode is electrically connected to the other of the principal surfaces of the composition change layer through a formation of a junction between the cathode electrode and another part of the semiconductor layers, the anode electrode and the cathode electrode are capable of applying a voltage to the composition change layer in a direction perpendicular to the principal surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.