Nitride semiconductor light-emitting element, nitride semiconductor light-emitting device, and method of manufacturing nitride semiconductor light-emitting element
US8772790B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 22, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Sep 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/853
Abstract
A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting element, a package substrate and an optically transparent resin sealing portion. The nitride semiconductor light-emitting element includes a substrate, a nitride semiconductor multilayer portion having a light-emitting layer and a protective layer. The nitride semiconductor multilayer portion is provided on the substrate. The protective layer is provided on an upper portion of the nitride semiconductor multilayer portion. The resin sealing portion seals the nitride semiconductor light-emitting element that is mounted on the package substrate. An air gap layer is formed in at least one of an area between the substrate and the light-emitting layer in the nitride semiconductor light-emitting element, an area between the light-emitting layer and the protective layer in the nitride semiconductor light-emitting element and an area in the package substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.