Semiconductor light-emitting diode and method for producing a semiconductor light-emitting diode

US8772804B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Magnus Ahlstedt · Regensburg, DE
• Johannes Baur · Regensburg, DE
• Ulrich Zehnder · Regensburg, DE
• Martin Strassburg · Tegernheim, DE
• Matthias Sabathil · Regensburg, DE
• Berthold Hahn · Hemau, DE

Key dates

• Filing date: Feb 11, 2009
• Grant date: Jul 8, 2014
• Expiry date: Dec 18, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8).