Stacked semiconductor device and a method of manufacturing the same
US8772825B2 · kind B2 · utility
1Cited by
5References
27Claims
0Family size
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Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Feb 1, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A stacked semiconductor device and an associated manufacturing method are disclosed. A first semiconductor unit having a first surface, which is defined as being not a polar plane, is provided. At least one pit is formed on the first surface, and the pit has a second surface that lies at an angle relative to the first surface. A polarization enhanced tunnel junction is formed on the second surface, and a second semiconductor unit is formed above the tunnel junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.