Trench MOSFET device and method for fabricating the same
US8772864B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 29, 2011 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Nov 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) device is disclosed. The trench MOSFET device includes a substrate, a body region, a source region, a dielectric layer, a metal layer, a contact hole, and a trench structure. The substrate includes a substrate layer and an epitaxial layer formed on the substrate layer; the body region is formed in the epitaxial layer; and the source region is formed in the body region of the epitaxial layer. Further, the dielectric layer is formed on the epitaxial layer; the metal layer is formed on the dielectric layer; and the contact hole is formed in the dielectric layer to connect the source region with the metal layer. In addition, the trench structure is formed in the epitaxial layer, and the trench structure includes a first trench that is a pectinate trench including a plurality of tooth trenches and a bar trench interconnecting the plurality of tooth trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.