Tunnel field-effect transistor
US8772877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Sep 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/311
Abstract
A tunnel field-effect transistor including at least: a source region including a corresponding source semiconductor material; a drain region including a corresponding drain semiconductor material, and a channel region including a corresponding channel semiconductor material, which is arranged between the source region and the drain region. The tunnel field-effect transistor further includes at least: a source-channel gate electrode provided on an interface between the source region and the channel region; an insulator corresponding to the source-channel gate electrode that is provided between the source-channel gate electrode and the interface between the source region and the channel region; a drain-channel gate electrode provided on an interface between the drain region and the channel region; and an insulator corresponding to the drain-channel gate electrode that is provided between the drain-channel gate electrode and the interface between the drain region and the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.