Electronic component comprising a number of MOSFET transistors and manufacturing method
US8772879B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2012 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Jun 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic component including a number of insulated-gate field effect transistors, said transistors belonging to at least two distinct subsets by virtue of their threshold voltage, wherein each transistor includes a gate that has two electrodes, namely a first electrode embedded inside the substrate where the channel of the transistor is defined and a second upper electrode located above the substrate facing buried electrode relative to channel and separated from said channel by a layer of dielectric material and wherein the embedded electrodes of all the transistors are formed by an identical material, the upper electrodes having a layer that is in contact with the dielectric material which is formed by materials that differ from one subset of transistors to another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.