Dual mode semiconductor laser and terahertz wave apparatus using the same
US8774243B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2011 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Feb 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2222
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.