Piezoelectric thin film resonator and manufacturing method thereof
US8776334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2008 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Oct 7, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49798
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a piezoelectric thin film resonator which can reduce variations in resonant frequency and resonant resistance by uniformly planarizing a structural film. The method of manufacturing the piezoelectric thin film resonator includes the steps of forming sacrifice layer patterns on an upper surface of a mother substrate; forming a dielectric film on the sacrifice layer patterns; processing a surface of the dielectric film by a plasma treatment; forming vibration portions on the dielectric film, the vibration portions each being composed of two excitation electrodes and a piezoelectric thin film provided therebetween; etching the sacrifice layer patterns; and cutting the mother substrate into separate piezoelectric thin film resonators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.