Polishing slurry for CMP, and polishing method
US8778217B2 · kind B2 · utility
1Cited by
2References
18Claims
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Key dates
| Filing date | Jul 4, 2007 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Aug 26, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed is a polishing slurry for CMP which makes it possible to polish a barrier layer, a wiring metal layer and an interlayer dielectric continuously, and restrain a phenomenon that the interlayer dielectric in a region near the wiring metal layer is excessively shaven off so that a depression is generated. A polishing slurry, for CMP, containing abrasive particles, an acid, a tolyltriazole compound represented by the following general formula (I), and water:wherein R1s each independently represent an alkylene group having 1 to 4 carbon atoms, and R2 represents an alkylene group having 1 to 4 carbon atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.