Single photoresist approach for high challenge photo process
US8778602B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Sep 18, 2009 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Jan 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of lithography patterning includes coating a resist layer on a substrate; performing an exposing process to the resist layer using a lithography tool with a numerical aperture tuned between about 0.5 and about 0.6; baking the resist layer; thereafter performing a first developing process to the resist layer for a first period of time; and performing a second developing process to the resist layer for a second period of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.