TFT substrate and method for producing TFT substrate
US8778722B2 · kind B2 · utility
25Cited by
3References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2011 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Jan 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.