Avalanche photodiode with special lateral doping concentration
US8778725B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2014 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Mar 4, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section of the electric control layer is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.