Methods of manufacturing non-volatile phase-change memory devices
US8778728B2 · kind B2 · utility
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4References
18Claims
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Key dates
| Filing date | Jun 15, 2011 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | May 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
Methods of manufacturing non-volatile memory devices may include separating first phase-change material groups and second phase-change material groups, which have different sizes, from a target including phase-change materials and faulting a phase-change material layer on an object by using the first phase-change material groups and the second phase-change material groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.