Method for manufacturing semiconductor device
US8778745B2 · kind B2 · utility
2Cited by
30References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2011 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Jun 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device comprises the steps of forming a seed over the insulating film by introducing hydrogen and a deposition gas into a first treatment chamber under a first condition and forming a microcrystalline semiconductor film over the seed by introducing hydrogen and the deposition gas into a second treatment chamber under a second condition: a second flow rate of the deposition gas is periodically changed between a first value and a second value; and a second pressure in the second treatment chamber is higher than or equal to 1.0×102 Torr and lower than or equal to 1.0×103 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.