Enhancement of properties of thin film ferroelectric materials

US8778774B2 · kind B2 · utility

Assignees

• University of Florida Research Foundation, INC. · US
• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Toshikazu Nishida · Gainesville, US
• Antonio Guillermo Acosta · New York, US
• John Anthony Rodriguez · Richardson, US
• Theodore S. Moise · Dallas, US

Key dates

• Filing date: Sep 23, 2011
• Grant date: Jul 15, 2014
• Expiry date: Jan 12, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N30/704

Abstract

Methods are provided for enhancing properties, including polarization, of thin-film ferroelectric materials in electronic devices. According to one embodiment, a process for enhancing properties of ferroelectric material in a device having completed wafer processing includes applying mechanical stress to the device, independently controlling the temperature of the device to cycle the temperature from room temperature to at or near the Curie temperature of the ferroelectric material and back to room temperature while the device is applied with the mechanical stress, and then removing the mechanical stress. Certain of the subject methods can be performed as part of a back end of line (BEOL) process, and may be performed during the testing phase at wafer or die level.