Manufacturing method of semiconductor device, semiconductor substrate, and camera module
US8778778B2 · kind B2 · utility
5Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2011 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.