Semiconductor device and method for manufacturing the same
US8779418B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2010 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Oct 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.