Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
US8779419B2 · kind B2 · utility
78Cited by
12References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2012 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | May 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×1018/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.