Semiconductor device
US8779433B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2011 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Aug 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.