Semiconductor device having two-way conduction characteristics, and electrostatic discharge protection circuit incorporating the same
US8779519B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2013 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Jan 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
A semiconductor device includes an n-type first doped region for receiving an external voltage, an n-type second doped region and a p-type third doped regions all formed in a p-type substrate, and is configured to have a first threshold voltage for forward conduction between the first and second doped regions, and a second threshold voltage for forward conduction between the first and third doped regions. A current is drained by flowing through the first doped region, the substrate and the second doped region if the external voltage is greater than the first threshold voltage or by flowing through the third doped region, the substrate and the first doped region if the external voltage is less than the second threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.