Semiconductor device and method of manufacturing same
US8779522B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 1, 2011 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Jan 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a technique capable of improving the reliability of a semiconductor device even if the downsizing thereof is advanced.The technical idea of the present invention lies in the configuration in which in a first to a third silicon nitride film to be formed by lamination, the respective film thicknesses thereof are not constant but become smaller in order from the third silicon nitride film in the upper layer to the first silicon nitride film in the lower layer while the total film thickness thereof is kept constant. Due to this it is possible to improve the embedding characteristic of the third silicon nitride film in the uppermost layer in particular, while ensuring the tensile stress of the first to third silicon nitride films, which makes effective the strained silicon technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.