Photodetectors useful as ambient light sensors and methods for use in manufacturing the same
US8779542B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2012 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Dec 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/40
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Photodetectors, methods for use in manufacturing photodetectors, and systems including photodetectors, are described herein. In an embodiment, a photodetector includes a plurality of photodiode regions, at least some of which are covered by an optical filter. A plurality of metal layers are located between the photodiode regions and the optical filter. The metal layers include an uppermost metal layer that is closest to the optical filter and a lowermost metal layer that is closest to the photodiode regions. One or more inter-level dielectric layers separate the metal layers from one another. Each of the metal layers includes one or more metal portions and one or more dielectric portions. The uppermost metal layer is devoid of any metal portions underlying the optical filter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.