Device having an avalanche photo diode and a method for sensing photons

US8779543B2 · kind B2 · utility

Assignee

• Technion Research & Development Foundation Limited · IL

Inventors

• Yael Nemirovsky · Haifa, IL
• Vitali Savuskan · Haifa, IL
• Sharon Bar-Lev Shefi · Nofit, IL
• Igor Brouk · Haifa, IL
• Gil Visokolov · Shoham, IL
• Amos Fenigstein · Haifa, IL
• Tomer Leitner · Nahariah, IL

Key dates

• Filing date: Sep 16, 2012
• Grant date: Jul 15, 2014
• Expiry date: Sep 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/225

Abstract

A semiconductor device that may include an avalanche photodiode (APD), the APD may include: a first doped region of a first polarity; a buried guard ring of a second polarity, the second polarity is opposite to the first polarity, the buried guard ring is spaced apart from the first doped region and is positioned below the first doped region; a well of the second polarity, wherein the well interfaces the first doped region to form a p-n junction; and a second doped region of the second polarity, the second doped region is spaced apart from the first doped region.