Plasmon absorption modulator systems and methods
US8780431B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2012 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Dec 21, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Plasmon absorption modulator systems and methods are disclosed. A plasmon absorption modulator system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and a metal layer formed on a top surface of the stack of quantum well layers. A method for modulating plasmonic current includes enabling propagation of the plasmonic current along a metal layer, and applying a voltage across the stack of quantum well layers to cause absorption of a portion of energy of the plasmonic current by the stack of quantum well layers. A metamaterial switching system includes a semiconductor substrate, a plurality of quantum well layers stacked on a top surface of the semiconductor substrate, and at least one metamaterial structure formed on a top surface of the stack of quantum well layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.