Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with side shields and an antiparallel structure top shield
US8780506B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2013 |
| Grant date | Jul 15, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3932
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has both side shields and an antiparallel structure (APS) top shield. The APS top shield is an antiferromagnetically exchange-coupled top shield that includes an antiparallel (AP) coupled structure and an antiferromagnetic (AF) layer which permits the use of the desired NiFex (x is between 15 and 25 atomic percent) material for the side shields. The APS top shield includes lower and upper ferromagnetic layers with respective antiparallel magnetizations. The antiparallel coupling structure between the two ferromagnetic layers consists of the antiparallel coupling (APC) film, which is typically Ru, Ir or Cr, and one and only one interface film of Co or CoFe. The APS top shield with one and only one Co or CoFe interface film enables the material of the side shields to be formed of the preferred NiFex (x is between 15 and 25 atomic percent) material without over-stabilization of the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.