Patent · US Active

Method and materials for reverse patterning

US8785113B2 · kind B2 · utility

1Cited by

1References

16Claims

0Family size

Assignee

Dow Corning Corporation · US

Inventors

Michael L. Bradford · Pflugerville, US
Eric Scott Moyer · Midland, US
Sheng Wang · Midland, US

Key dates

Filing date	Jun 22, 2010
Grant date	Jul 22, 2014
Priority date	—
Expiry date	Aug 6, 2030

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC08G77/04
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.