Silicon carbide lamina
US8785294B2 · kind B2 · utility
1Cited by
14References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Jan 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an electronic device includes providing a silicon carbide or diamond-like carbon donor body and implanting ions into a first surface of the donor body to define a cleave plane. After implanting, an epitaxial layer is formed on the first surface, and a temporary carrier is coupled to the epitaxial layer. A lamina is cleaved from the donor body at the cleave plane, and the temporary carrier is removed from the lamina. In some embodiments a light emitting diode or a high electron mobility transistor is fabricated from the lamina and epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.