IGFET device having an RF capability

US8785987B2 · kind B2 · utility

Assignee

• ACCO · FR

Inventor

• Denis A. Masliah · Poissy, FR

Key dates

• Filing date: Jul 22, 2011
• Grant date: Jul 22, 2014
• Expiry date: Jul 22, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

An IGFET device includes: —a semiconductor body having a major surface, —a source region of first conductivity type abutting the surface, —a drain region of the first conductivity-type abutting the surface and spaced from the source region with a channel therefrom, —an active gate overlying the channel and insulated from the channel by a first dielectric material forming the gate oxide of the IGFET device, —a dummy gate positioned between the active gate and the drain and insulated from the active gate by a second dielectric material so that a capacitance is formed between the active gate and the dummy gate, and insulated from the drain region by the gate oxide, wherein the active gate and the dummy gate are forming the electrodes of the capacitance substantially perpendicular to the surface.