Nanowire FET
US8785996B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2010 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Jul 25, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N3/067
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus including a first electrode; a second electrode; a nano-scale channel between the first electrode and the second electrode wherein the nano-scale channel has a first state in which an electrical impedance of the nano-scale channel is relatively high and a second state in which the electrical impedance of the nano-scale channel is relatively low; dielectric adjacent the nano-scale channel; and a gate electrode adjacent the dielectric configured to control a threshold number of quanta of stimulus, wherein the nano-scale channel is configured to switch between the first state and the second state in response to an application of a quantum of stimulus above the threshold number of quanta of stimulus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.