Semiconductor device
US8786002B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2011 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Apr 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B1/48
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and the drain region of each of a plurality of MISFETs coupled in series, a distortion compensating capacitance circuit is coupled which has a voltage dependency such that, in either of the cases where a positive voltage is applied to the drain region based on the potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, the capacitance decreases to a value smaller than that in a state where the potential of the source region and the potential of the drain region are at the same level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.