Photoelectric conversion device and imaging system
US8786044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Oct 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A photoelectric conversion device includes a film that covers the photoelectric conversion part and a transfer gate electrode, wherein a first region having a refractive index lower than refractive indices of the film and the photoelectric conversion part, is provided between the film and the photoelectric conversion part, and a second region having a refractive index lower than the refractive indices of the transfer gate electrode and the film, is provided between the film and the top surface of the transfer gate electrode, and wherein T1<T2<λ/2−T1 is satisfied, where an optical thickness of the first region is T1, an optical thickness of the second region is T2, and a wavelength of a light incident on the photoelectric conversion part is λ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.