Semiconductor device and method for manufacturing the same
US8786046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2013 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Jun 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active region), in peripheral areas (peripheral regions or junction end regions), it is difficult to achieve a breakdown voltage equivalent to or higher than in the cell region through a conventional junction edge terminal structure or resurf structure. The semiconductor device includes a power MOSFET having a super junction structure formed in the cell region by a trench fill technique. Also, super junction structures having orientations parallel to the sides of the cell region are provided in a drift region around the cell region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.