Semiconductor device
US8786061B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 4, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Aug 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first semiconductor substrate and a second semiconductor substrate laminated with an insulating layer, a first transmission line formed on the first semiconductor substrate, the first transmission line including a signal line and a ground, a second transmission line formed on the second semiconductor substrate, the second transmission line including a signal line and a ground, a first via layer for the signal lines, the first via layer for the signal lines being formed of a conductor layer formed within a via hole, a first via layer for the grounds, the first via layer for the grounds being formed of a conductor layer formed within a via hole, and a second via layer for the grounds, the second via layer for the grounds being formed of a conductor layer formed within a via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.