Semiconductor apparatus having a high-aspect penetrating electrode and manufacturing method thereof
US8786091B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 19, 2009 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Jan 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus with a penetrating electrode having a high aspect ratio is manufactured with a low-temperature process. In one embodiment a first electrode 3 and a second electrode 6 of a semiconductor substrate 1 that are provided at the front and rear surface sides, respectively, are electrically connected by a conductive object 7 filled in a contact hole 4 and an extended portion 6a of the second electrode 6 extends to the contact hole 4. Even though the contact hole 4 has a high aspect ratio, film formation using the low-temperature process is enabled by using the conductive object 7, instead of forming the second electrode 6 on a bottom portion of the contact hole 4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.