Semiconductor storage device and method of manufacturing the same
US8787022B2 · kind B2 · utility
14Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2011 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Nov 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10409
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, coupling capacitance in a state in which a first heat radiation member is arranged between parallel flat plates of a first capacitor formed by a surface of a housing opposed to one surface of a printed circuit board and the printed circuit board is smaller than coupling capacitance in a state in which an integrally formed object having a relative dielectric constant of 5.8 is arranged between the first capacitor to cover a first radiating region containing the controller and the first nonvolatile semiconductor memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.