High reliability etched-facet photonic devices
US8787419B2 · kind B2 · utility
9Cited by
6References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 17, 2006 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Feb 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2214
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.