Chemical mechanical polishing composition and method for polishing phase change alloys
US8790160B2 · kind B2 · utility
1Cited by
9References
8Claims
0Family size
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Key dates
| Filing date | Apr 28, 2011 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | May 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition comprising, as initial components: water; an abrasive; at least one of a phthalic acid, a phthalic anhydride, a phthalate compound and a phthalic acid derivative; a chelating agent; a poly(acrylic acid-co-maleic acid); and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.