Method for manufacturing a solar cell
US8790948B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2011 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Nov 23, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In the existent method for manufacturing a solar cell, manufacture of a solar cell having a quantum well having a crystalline well layer and capable of controlling the thickness of the well layer was difficult. A quantum well having an amorphous well layer, comprising a barrier layer and an amorphous well layer is formed and then the quantum well having the amorphous well layer is annealed thereby crystallizing the amorphous well layer to form a quantum well having a crystalline well layer. By applying energy density applied to the amorphous well layer at an energy density of 1.26 J/mm2 or more and 28.8 J/mm2 or less, the crystalline well layer can be formed and the lamination structure of the quantum well can be maintained simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.