Photoelectric conversion device and method for producing photoelectric conversion device
US8790952B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Jan 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
Abstract
A manufacturing method forms a photoelectric conversion device having a photoreceiving portion provided in a substrate and an interlayer film arranged over the substrate. The method includes forming a layer of a lower etching rate rather than the interlayer film so that the layer of the lower etching rate covers a whole surface of the photoreceiving portion, forming the interlayer film over the layer of the lower etching rate, etching a portion of the interlayer film corresponding to the photoreceiving portion to form a hole penetrating through the interlayer film and reaching the layer of the lower etching rate, and disposing in the hole a material of a higher refractive index rather than the interlayer film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.