Effecting selectivity of silicon or silicon-germanium deposition on a silicon or silicon-germanium substrate by doping
US8790969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2013 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Apr 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0172
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selective deposition of Si or SiGe on a Si or SiGe surface exploits differences in physico-chemical surface behavior according to a difference in doping of first and second surface regions. By providing at least one first surface region with a Boron doping of a suitable concentration range and exposing the substrate surface to a cleaning and passivating ambient atmosphere in a prebake step at a temperature lower or equal than 800° C., a subsequent deposition step of Si or SiGe will not lead to a layer deposition in the first surface region. This effect is used for selective deposition of Si or SiGe in the second surface region, which is not doped with Boron in the suitable concentration range, or doped with another dopant, or not doped. Several devices are, thus, provided. The method thus saves a usual photolithography sequence required for selective deposition of Si or SiGe in the second surface region according to the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.