Patterned thin film dielectric layer formation
US8791023B2 · kind B2 · utility
11Cited by
11References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Sep 3, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing an inorganic thin film dielectric material layer includes providing a substrate. A first inorganic thin film dielectric material layer is deposited on the substrate using an atomic layer deposition process. The first inorganic thin film dielectric material layer is treated after its deposition. A patterned deposition inhibiting material layer is provided on the substrate. A second inorganic thin film dielectric material layer is selectively deposited on a region of the substrate where the deposition inhibiting material layer is not present using an atomic layer deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.