Matrix imaging device comprising at least one set of photosites with multiple integration times
US8791401B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 31, 2012 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Nov 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/583
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for controlling a pixel may include first and second photosites, each having a photodiode and a charge-transfer transistor, a read node, and an electronic read element, all of which are common to all the photosites. The method may include an accumulation of photogenerated charges in the photodiode of the first photosite during a first period, an accumulation of photogenerated charges in the photodiode of the second photosite during a second period shorter than the first period, a selection of the signal corresponding to the quantity of charges accumulated in the photodiode of a photosite having the highest unsaturated intensity or else a saturation signal, and a digitization of the selected signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.