Thin-film semiconductor device for display apparatus, method for manufacturing thin-film semiconductor device for display apparatus, EL display panel, and EL display apparatus
US8791453B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 20, 2012 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Dec 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer above the gate electrode; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; a first power supply line electrically connected to the second electrode and in a same layer as the second electrode; and a second power supply line in a same layer as the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the first power supply line and the second power supply line are electrically connected via a second conductive portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.