Compound semiconductor device and manufacturing therefor
US8791465B2 · kind B2 · utility
1Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2012 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Sep 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/602
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.