Semiconductor device
US8791505B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2013 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Mar 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device includes: a second nitride semiconductor layer formed on a first nitride semiconductor layer, and having a larger band gap than the first nitride semiconductor layer; and an electrode filling a recess formed in the first and second nitride semiconductor layers. The first nitride semiconductor layer has a two-dimensional electron gas layer immediately below the second nitride semiconductor layer. The electrode and the second nitride semiconductor layer are in contact with each other at a first contact interface. The electrode and a portion of the first nitride semiconductor layer corresponding to the two-dimensional electron gas layer are in contact with each other at a second contact interface connected below the first contact interface. The first contact interface is formed such that a width of the recess increases upward. The second contact interface is more steeply inclined than the first contact interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.