Matrix imaging device having photosites with global shutter charge transfer

US8791512B2 · kind B2 · utility

Assignees

• STMicroelectronics (Crolles 2) SAS · FR
• STMicroelectronics SA

Inventors

• Francois Roy · Seyssinet-Pariset, FR
• Julien Michelot · Grenoble, FR

Key dates

• Filing date: Sep 23, 2011
• Grant date: Jul 29, 2014
• Expiry date: Jan 31, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor region for reading charge specific to said photosite, and a charge transfer circuit configured so as to permit a transfer of charge between the charge storage region and the charge reading region. Each photosite further includes at least one buried first electrode. At least one part of that buried first electrode bounds at least one part of the charge storage region. The charge transfer circuit for each photosite includes at least one second buried electrode.